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inchange semiconductor product specification silicon npn power transistors 2SC2258A description ? ? with to-126 package ? high transition frequency f t ? high collector-emitter voltage v ceo applications ? high voltage general amplifier ?tv video output amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector- emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current 0.1 a i cm collector current-peak 0.15 a 1.2* 1 p c collector power dissipation t c =25 ?? 4* 2 w t j junction temperature 150 ?? t stg storage temperature -55 ?? +150 ?? note :*1: without heat sink *2: with a 100 ? 100 ? 2 mm a1 heat sink
inchange semiconductor product specification 2 silicon npn power transistors 2SC2258A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit i cer collector cutoff current v ce =250v;r be =100k |? 100 | a v (br)ebo emitter-base breakdown voltage i e =0.1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =50ma ;i b =5m a 1.2 v v be base-emitter voltage i c =40ma ; v ce =20v 1.2 v h fe-1 dc current gain i c =40ma ; v ce =20v 40 h fe-2 dc current gain i c =5ma ; v ce =50v 30 c ob output capacitance i e =0; v cb =50v;f=1mhz 3 4.5 pf f t transition frequency i e =-10ma ; v ce =10v 100 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2SC2258A package outline fig.2 outline dimensions

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